【Micro-LED】香港科技大学刘纪美教授确认出席第二届中国（国际）Micro-LED显示高峰论坛并演讲

2018年随着三星、索尼、友达等大厂陆续推出Micro-LED相关概念产品，新的显示技术及应用市场开始成形。Micro-LED目前在寿命、对比度、能耗、响应时间等技术指标上具备一定的优势，国际龙头厂商苹果与三星等，以及我国大陆和台湾面板、LED芯片及封装企业都在积极布局。

Micro-LED正在引发新的显示技术变革，然而，目前Micro-LED依然存在许多挑战，不管是制程技术、检验标准，还是生产成本，都与大规模量产应用存在很大的差距。如何突破Micro-LED技术发展瓶颈、推进产业化？我国企业又该如何把握机遇、克服挑战、培育新的显示产业成长动能？

为此，中国光学光电子行业协会液晶分会、中国半导体照明/LED产业与应用联盟、中国半导体行业协会、中国电子材料行业协会、中国光学光电子行业协会光电器件分会、中国光学光电子行业协会发光二极管显示应用分会、南京平板显示行业协会、台湾显示器件产业联合总会和广东省Micro-LED微显示产业技术创新联盟共同主办，南方科技大学、上海舜联文化传播有公司、深圳市中小微企业创新发展研究院联合承办，以“新动能、新挑战、新机遇”为主题的“第二届中国（国际）Micro-LED显示高峰论坛”，将于2018年11月11-12日在中国深圳隆重召开。

Highlights 会议亮点

全球携手：产学研用协同发展，共促Micro-LED显示技术和产业；

跨界融合：横跨显示、LED、半导体三大领域；

强强联合：三大领域九家行业协会共同主办；

大咖云集：全球数十位Micro-LED 显示原创技术领军人物、全球顶级专家团、全球专注于Micro-LED 显示的企业领袖齐聚一堂；

趋势探讨：聚焦国际Micro-LED 显示与巨量转移关键技术、应用及未来发展趋势；

热点解析：最热门两大话题Micro-LED与量子点的紧密结合。

High Frequency, high speed and photonic devices: Lasers and Light Emitting Diodes (LEDs), Heterostructure field-effect and bipolar transistors (HFETs and HBTs); Metalorganic chemical vapor deposition (MOCVD) of compound semiconductors including III-nitrides, III-As/P/Sb and alloys, nano-structures, selective-area hetero-epitaxy; device integration

Professor Kei May Lau was born in Hong Kong and received all her pre-college education (K-12) from the Pui Ching Middle School.  She received the B.S. and M.S. degrees in physics from University of Minnesota, Minneapolis, in 1976 and 1977 respectively, and the Ph.D. Degree in Electrical Engineering from Rice University, Houston, Texas, in 1981.
 
From 1980 to 1982, she was a Senior Engineer at M/A-COM Gallium Arsenide Products, Inc., where she worked on epitaxial growth of GaAs for microwave components and development of mm-wave devices. In the fall of 1982, she joined the faculty of the Electrical and Computer Engineering Department at the University of Massachusetts/Amherst, where she became a full professor in 1993. She initiated metalorganic chemical vapor deposition (MOCVD), compound semiconductor materials and devices programs at UMass. Her research group performed studies on heterostructures, quantum wells, strained-layers, III-V selective epitaxy, as well as high-frequency and photonic devices. Professor Lau spent her first sabbatical leave in 1989 at the MIT Lincoln Laboratory and worked with the Electro-optical Devices Group. She developed acoustic sensors at the DuPont Central Research and Development Laboratory in Wilmington, Delaware during her second sabbatical leave ('95-'96). In the fall of 1998, she was a visiting professor at the Hong Kong University of Science and Technology (HKUST), where she joined the regular faculty since the summer of 2000. She established the Photonics Technology Center for R&D effort in III-V and wide band-gap semiconductor materials and devices.

Professor Lau is a Fellow of the IEEE, a recipient of the US National Science Foundation (NSF) Faculty Awards for Women (FAW) Scientists and Engineers (1991) and Hong Kong Croucher Senior Research Fellowship (2008). She served on the IEEE Electron Devices Society Administrative Committee and was an Editor of the IEEE Transactions on Electron Devices (1996-2002). She also served as an Associate Editor for the Journal of Crystal Growth.  She is an Associate Editor of the Applied Physics Letters.