浙江大学《Carbon》：轻质石墨烯-铜芯壳纳米纤维织物，用于高效电磁干扰屏蔽

随着电子设备持续小型化及无线通信技术快速发展，电磁污染问题日益严峻。开发具有高屏蔽效率和轻量化的柔性电磁屏蔽材料已成为突出的研究焦点。本文，浙江大学李拯研究员在《Carbon》期刊发表名为“Lightweight graphene-copper core-shell nanofiber fabric for highly efficient electromagnetic interference shielding”的论文，研究通过电纺丝和后续无电镀工艺，制备出纳米级超薄铜包覆石墨烯同轴纳米纤维织物（GNF@tCu），旨在协同发挥碳基材料与金属的互补优势。这种由核壳纳米纤维组成的织物具有出色的柔韧性、低密度（0.53 g/cm3）和高导电性（3 × 104 S/m）。基于多界面复合结构形成的三重界面阻抗失配机制，该织物展现出卓越的比电磁屏蔽效能（X波段下SSE达118 dB cm³/g），远超现有纺织屏蔽材料。因此，所提出的金属-石墨烯纳米纤维织物在柔性电磁屏蔽材料及可穿戴电子设备领域具有重大应用潜力。

图1. (a) Diagram illustrating the fabrication process of GNF@tCu. (b) Photograph and SEM images (surface and cross-sectional views) of GNF@tCu. (c) Comparison of resistivity shift versus temperature (100–400 K) for GNF, GNF@tCu, and copper wire mesh. (d) Conductivity and thickness-normalized specific SE of GNF@tCu compared with other EMI shielding fabrics from references.

图2. (a) XPS spectra of graphene oxide nanofibers (GONFs), undoped GNFs, and N-doped GNFs. (b) High-resolution N1s XPS spectrum of N-doped GNF annealed at 700 °C. (c) Relative proportions of pyridinic, pyrrolic, and graphitic nitrogen in the N1s spectra of N-doped GNFs across various annealing temperatures. (d) Water contact angle measurements for N-doped GNFs at different annealing temperatures. (e) Temporal evolution of dynamic wetting behavior in N-doped GNFs subjected to varying annealing temperatures. (f) Comparative analysis of nitrogen doping content, electrical conductivity, and hydrophobicity in N-doped GNFs as a function of annealing temperature.

图3. (a) Schematic illustration of electroless copper plating on N-doped hydrophilic GNF (Top: process flowchart; bottom: SEM images and EDS elemental mapping showing the process of copper deposition). (b) Morphological evolution of copper plating on graphene nanofiber surface in 15 min. (c) Variation of fiber diameter versus copper plating duration. (d) Schematic diagram of the evolution of electroless copper plating on a single fiber. (e) Silver-plated GNF: photo (left) and SEM image (right). (f) Nickel-plated GNF: photo (left) and SEM image (right).

图4. (a) Stress-strain curves for GNF and GNF@tCu. (b) Comparative analysis of mechanical properties, including toughness, tensile strength, and Young's modulus, of GNF and GNF@tCu. (c) Relative resistance change rate (ΔR/R₀) of GNF@tCu under varied bending radii. The inset indicates the definition of bending radius. (d) Resistance stability of GNF@tCu and (e) real-time resistance changes under repeated bending cycles at a 3 mm bending radius. (f) Photograph of GNF@tCu in bent state showing its good flexibility. (g) Time-temperature curve of GNF@tCu under joule heating in constant voltage mode from 0.3 to 1.2 V. (h) Infrared thermo images of heating GNF@tCu under different voltages. (i) The variation of saturation temperature versus U². (j) Real-time temperature gradient curves of surface temperature (j) at driving voltages from 0.3 to 1.2 V and (k) during multiple cycles. (l) Relationship between heating-up rate and input power density.

图5. (a) Schematic illustration of the EMI shielding mechanism for the GNF@tCu. (b) EMI SE of GNF@tCu in the frequency range of 3.94–18 GHz. (c) EMI SE for differeKnt thickness GNFs substrate after 10 min of electroless plating. (d) EMI SE and specific shielding effectiveness (SSE) of GNFs with a thickness of 20 μm under different electroless plating duration. (e) Thickness specific SE of GNF, GNF@tCu and commercial copper wire mesh. (f) SSE of the three in the 8.2–12.4 GHz frequency range. (g) Demonstration of the EMI shielding performance of GNF@tCu. A piece of non-shielding paper is taken as comparison (middle).

文献：

https://doi.org/10.1016/j.carbon.2025.121061